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LT5557 400MHz to 3.8GHz 3.3V High Signal Level Downconverting Mixer
FEATURES

DESCRIPTIO

3.3V Operation for Reduced Power 50 Single-Ended RF and LO Ports Wide RF Frequency Range: 400MHz to 3.8GHz* High Input IP3: 25.6dBm at 900MHz 24.7dBm at 1950MHz 23.7dBm at 2.6GHz Conversion Gain: 3.3dB at 900MHz 2.9dB at 1950MHz -3dBm LO Drive Level Low LO Leakage Low Noise Figure: 10.6dB at 900MHz 11.7dB at 1950MHz Very Few External Components 16-Lead (4mm x 4mm) QFN Package
The LT(R)5557 active mixer is optimized for high linearity, wide dynamic range downconverter applications. The IC includes a high speed differential LO buffer amplifier driving a double-balanced mixer. Broadband, integrated transformers on the RF and LO inputs provide singleended 50 interfaces. The differential IF output allows convenient interfacing to differential IF filters and amplifiers, or is easily matched to drive a single-ended 50 load, with or without an external transformer. The RF input is internally matched to 50 from 1.6GHz to 2.3GHz, and the LO input is internally matched to 50 from 1GHz to 5GHz. The frequency range of both ports is easily extended with simple external matching. The IF output is partially matched and usable for IF frequencies up to 600MHz. The LT5557's high level of integration minimizes the total solution cost, board space and system-level variation.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. *Operation over a wider frequency range is possible with reduced performance. Consult factory for information and assistance.
APPLICATIO S

Cellular, CDMA, WCDMA, TD-SCDMA and UMTS Infrastructure WiMAX Wireless Infrastructure Receiver Wireless Infrastructure PA Linearization 900MHz/2.4GHz/3.5GHz WLAN
TYPICAL APPLICATIO
LO INPUT -3dBm (TYP) LT5557
High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure
Conversion Gain, IIP3, SSB NF and LO Leakage vs RF Frequency
26 24 22 IIP3 10 LOW-SIDE LO IF = 240MHz PLO = -3dBm 20 TA = 25C VCC = 3.3V 30 SSB NF 40 LO-IF LO-RF GC 1800 2100 2000 1900 RF FREQUENCY (MHz) 50 60 2200 0
GC (dB), NF (dB), IIP3 (dBm)
20 18 16 14 12 10 8 6 4
4.7pF IF+ 100nH 1nF 150nH RF INPUT RF BIAS GND EN VCC2 VCC1 1nF IF - 100nH 3.3V 1F
5557 TA01a
4.7pF
IF OUTPUT 240MHz
2 1700
U
LO LEAKAGE (dBm)
5557 TA01b
U
U
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LT5557
ABSOLUTE
(Note 1)
AXI U
RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW 16 15 14 13 NC 1 NC 2 RF 3 NC 4 5 6 7 8 17 12 GND 11 IF+ 10 IF
-
Supply Voltage (VCC1, VCC2, IF+, IF-) ......................... 4V Enable Voltage ............................... -0.3V to VCC + 0.3V LO Input Power (380MHz to 4.2GHz) ............... +10dBm LO Input DC Voltage ............................ -1V to VCC + 1V RF Input Power (400MHz to 3.8GHz) ............... +12dBm RF Input DC Voltage ............................................ 0.1V Operating Temperature Range ............... - 40C to 85C Storage Temperature Range ................ - 65C to 125C Junction Temperature (TJ)................................... 125C CAUTION: This part is sensitive to electrostatic discharge (ESD). It is very important that proper ESD precautions be observed when handling the LT5557.
ORDER PART NUMBER LT5557EUF#PBF
NC
NC
NC
LO
9 GND
EN
VCC2
VCC1
NC
UF PART MARKING 5557
UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN
TJMAX = 125C, JA = 37C/W EXPOSED PAD (PIN 17) IS GND MUST BE SOLDERED TO PCB
Order Options Tape and Reel: Add #TR Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges.
DC ELECTRICAL CHARACTERISTICS
VCC = 3.3V, EN = High, TA = 25C, unless otherwise specified. Test circuit shown in Figure 1. (Note 3)
PARAMETER Power Supply Requirements (VCC) Supply Voltage Supply Current VCC1 (Pin 7) VCC2 (Pin 6) IF+ + IF- (Pin 11 + Pin 10) Total Supply Current EN = Low 2.7 0.3 EN = 3.3V DC 53 2.8 2.9 90 2.9 3.3 25.1 3.3 53.2 81.6 3.9 V mA mA mA mA A V V A s s CONDITIONS MIN TYP MAX UNITS
60 92 100
Enable (EN) Low = Off, High = On Shutdown Current Input High Voltage (On) Input Low Voltage (Off) EN Pin Input Current Turn-ON Time Turn-OFF Time
AC ELECTRICAL CHARACTERISTICS
PARAMETER RF Input Frequency Range LO Input Frequency Range IF Output Frequency Range RF Input Return Loss LO Input Return Loss IF Output Impedance LO Input Power CONDITIONS
Test circuit shown in Figure 1. (Notes 2, 3)
MIN 400 1000 to 4200 380 0.1 to 600 >12 >10 529||2.6pF -8 -5 -3 0 2 5 TYP 1600 to 2300 3800 MAX UNITS MHz MHz MHz MHz MHz dB dB R||C dBm dBm
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No External Matching (Midband) With External Matching (Low Band or High Band) No External Matching With External Matching Requires Appropriate IF Matching ZO = 50, 1600MHz to 2300MHz (No External Matching) ZO = 50, 1000MHz to 5000MHz (No External Matching) Differential at 240MHz 1200MHz to 4200MHz 380MHz to 1200MHz
2
U
W
U
U
WW
W
LT5557
AC ELECTRICAL CHARACTERISTICS
PARAMETER Conversion Gain CONDITIONS
Standard Downmixer Application: VCC = 3.3V, EN = High, TA = 25C, PRF = - 6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), fLO = fRF - fIF, PLO = -3dBm (0dBm for 450MHz and 900MHz tests), IF output measured at 240MHz, unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
MIN TYP 2.9 3.3 3.0 2.9 2.9 2.5 1.7 -0.0217 24.1 25.6 25.5 24.7 24.3 23.7 23.5 12.7 10.6 11.3 11.7 12.8 13.2 15.4 <-50 <-45 <-42 <-38 >50 >42 >41 >37 -61 -53 -83 -70 10.0 8.8 8.8 8.6 9.1 MAX UNITS dB dB dB dB dB dB dB dB/C dBm dBm dBm dBm dBm dBm dBm dB dB dB dB dB dB dB dBm dBm dBm dBm dB dB dB dB dBc dBc dBc dBc dBm dBm dBm dBm dBm RF = 450MHz, IF = 70MHz, High Side LO RF = 900MHz, IF = 140MHz RF = 1750MHz RF = 1950MHz RF = 2150MHz RF = 2600MHz, IF = 360MHz RF = 3600MHz, IF = 450MHz TA = - 40C to 85C, RF = 1950MHz RF = 450MHz, IF = 70MHz, High Side LO RF = 900MHz, IF = 140MHz RF = 1750MHz RF = 1950MHz RF = 2150MHz RF = 2600MHz, IF = 360MHz RF = 3600MHz, IF = 450MHz RF = 450MHz, IF = 70MHz, High Side LO RF = 900MHz, IF = 140MHz RF = 1750MHz RF = 1950MHz RF = 2150MHz RF = 2600MHz, IF = 360MHz RF = 3600MHz, IF = 450MHz fLO = 380MHz to 1600MHz fLO = 1600MHz to 4000MHz fLO = 380MHz to 2200MHz fLO = 2200MHz to 4000MHz fRF = 400MHz to 1700MHz fRF = 1700MHz to 3800MHz fRF = 400MHz to 2300MHz fRF = 2300MHz to 3800MHz 900MHz: fRF = 830MHz at -6dBm, fIF = 140MHz 1950MHz: fRF = 1830MHz at -6dBm, fIF = 240MHz 900MHz: fRF = 806.67MHz at -6dBm, fIF = 140MHz 1950MHz: fRF = 1790MHz at -6dBm, fIF = 240MHz RF = 450MHz, IF = 70MHz, High Side LO RF = 900MHz, IF = 140MHz RF = 1950MHz RF = 2600MHz, IF = 360MHz RF = 3600MHz, IF = 450MHz
Conversion Gain vs Temperature Input 3rd Order Intercept
Single-Sideband Noise Figure
LO to RF Leakage LO to IF Leakage RF to LO Isolation RF to IF Isolation 2RF-2LO Output Spurious Product (fRF = fLO + fIF/2) 3RF-3LO Output Spurious Product (fRF = fLO + fIF/3) Input 1dB Compression
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: 450MHz and 900MHz performance measured with external LO and RF matching. 2600MHz and 3600MHz performance measured with external RF matching. See Figure 1 and Applications Information.
Note 3: Specifications over the -40C to 85C temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: SSB Noise Figure measurements performed with a small-signal noise source and bandpass filter on RF input, and no other RF signal applied.
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LT5557
VCC = 3.3V, Test circuit shown in Figure 1. Midband (No external RF/LO matching) 240MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), PLO = -3dBm, unless otherwise noted. Conversion Gain, IIP3 and NF vs RF Frequency
26 24 GC (dB), NF (dB), IIP3 (dBm) 22 20 18 16 14 12 10 8 6 4 2 1.6 GC 1.7 TA = 25C IF = 240MHz 1.8 1.9 2.0 2.1 RF FREQUENCY (GHz) 2.2 2.3 -60 1.2 SSB NF IIP3 LOW-SIDE LO HIGH-SIDE LO RF-LO RF-IF SUPPLY CURRENT (mA) -30
LO LEAKAGE (dBm)
TYPICAL PERFOR A CE CHARACTERISTICS
Conversion Gain and IIP3 vs Temperature (Low-Side LO)
27 25 23 21 19 17 15 13 11 9 7 5 3 1 -50
GC (dB), NF (dB), IIP3 (dBm)
IIP3 1750MHz 1950MHz 2150MHz IF = 240MHz GC GC (dB), IIP3 (dBm)
GC (dB), IIP3 (dBm)
-25
25 50 0 TEMPERATURE (C)
1750MHz Conversion Gain, IIP3 and NF vs LO Power
27 25 23 21 19 17 15 13 11 9 7 5 3 1 IIP3 26 24 22 20 18 16 14 12 10 8 6 4 2 0
GC (dB), NF (dB), IIP3 (dBm)
GC (dB), NF (dB), IIP3 (dBm)
GC (dB), NF (dB), IIP3 (dBm)
SSB NF LOW-SIDE LO IF = 240MHz
GC
-9
-7
-3 -1 1 -5 LO INPUT POWER (dBm)
4
UW
5557 G01
LO Leakage and RF Isolation vs LO and RF Frequency
-20 55
87 86
Supply Current vs Supply Voltage
45
RF ISOLATION (dB)
85 84 83 82 81 80 79 -10C -40C 85C 60C 25C
-40 LO-IF
35
-50 LO-RF TA = 25C PLO = -3dBm
25
78 77 2.9 3.1 3.5 3.7 3.3 SUPPLY VOLTAGE (V) 3.9
5557 G03
1.5 2.1 2.4 1.8 LO/RF FREQUENCY (GHz)
15 2.7
5557 G02
Conversion Gain and IIP3 vs Temperature (High-Side LO)
27 25 23 21 19 17 15 13 11 9 7 5 3 1 -50 IIP3
1950MHz Conversion Gain, IIP3 and NF vs Supply Voltage
26 24 22 20 18 16 14 12 10 8 6 4 2 0 2.9
IIP3 -40C 25C 85C SSB NF LOW-SIDE LO IF = 240MHz
GC
1750MHz 1950MHz 2150MHz IF = 240MHz GC
75
100
5557 G04
-25
25 50 0 TEMPERATURE (C)
75
100
5557 G05
3.1
3.5 3.7 3.3 SUPPLY VOLTAGE (V)
3.9
5557 G06
1950MHz Conversion Gain, IIP3 and NF vs LO Power
IIP3 -40C 25C 85C SSB NF LOW-SIDE LO IF = 240MHz GC 26 24 22 20 18 16 14 12 10 8 6 4 2 0
2150MHz Conversion Gain, IIP3 and NF vs LO Power
IIP3 -40C 25C 85C SSB NF
-40C 25C 85C
LOW-SIDE LO IF = 240MHz GC
3
5557 G07
-9
-7
-3 -1 1 -5 LO INPUT POWER (dBm)
3
5557 G08
-9
-7
-3 -1 1 -5 LO INPUT POWER (dBm)
3
5557 G09
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LT5557
VCC = 3.3V, Test circuit shown in Figure 1. Midband (No external RF/LO matching) 240MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), PLO = -3dBm, unless otherwise noted. IF Output Power, IM3 and IM5 vs RF Input Power (2 Input Tones)
10 0
OUTPUT POWER/TONE (dBm)
TYPICAL PERFOR A CE CHARACTERISTICS
IFOUT OUTPUT POWER (dBm)
-20 -30 -40 -50 -60 -70 -80 -90 IM3 IM5 0
5557 G10
-15 -25 -35 -45 -55 -65 -75 -85 3RF-3LO (RF = 1790MHz) 2RF-2LO (RF = 1830MHz)
TA = 25C RF1 = 1949.5MHz RF2 = 1950.5MHz LO = 1710MHz
TA = 25C LO = 1710MHz IF = 240MHz
RELATIVE SPUR LEVEL (dBc)
-10
-100 -18
-15 -12 -9 -6 -3 RF INPUT POWER (dBm/TONE)
Conversion Gain Distribution at 1950MHz
40 35 30 TA = 25C LOW-SIDE LO IF = 240MHz
DISTRIBUTION (%)
DISTRIBUTION (%)
25 20 15 10 5 0 2.6 2.7 2.9 2.8 3.0 3.1 CONVERSION GAIN (dB) 3.2
5557 G25
20 15 10 5 0 23 24 26 25 IIP3 (dBm)
LOW-SIDE LO IF = 240MHz
DISTRIBUTION (%)
450MHz application (with external RF/LO matching) 70MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), high-side LO at 0dBm, unless otherwise noted. Conversion Gain, IIP3 and NF vs RF Frequency
26 24 22
GC (dB), NF (dB), IIP3 (dBm)
IIP3
GC (dB), NF (dB), IIP3 (dBm)
20 18 16 14 12 10 8 6 4 2 400 GC SSB NF
17 15 13 11 9 7 5 3 1 GC SSB NF
LO LEAKAGE (dBm)
HIGH-SIDE LO TA = 25C IF = 70MHz
475 450 425 RF FREQUENCY (MHz)
UW
5557 G13
IFOUT, 2 x 2 and 3 x 3 Spurs vs RF Input Power (Single Tone)
15 IFOUT 5 (RF = 1950MHz) -5
2 x 2 and 3 x 3 Spurs vs LO Power (Single Tone)
-40 -45 -50 -55 -60 -65 -70 -75 -80 3RF-3LO (RF = 1790MHz) 2RF-2LO (RF = 1830MHz) TA = 25C LO = 1710MHz IF = 240MHz PRF = -6dBm
-95 -15 -12 -9 -6 -3 0 3 6 RF INPUT POWER (dBm)
9
12
-9
-7
-5 -1 1 -3 LO INPUT POWER (dBm)
3
5557 G12
5557 G11
35 30 25
IIP3 Distribution at 1950MHz
85C 25C -40C
30 27 24 21 18 15 12 9 6 3
SSB Noise Figure Distribution at 1950MHz
TA = 25C LOW-SIDE LO IF = 240MHz
27
28
5557 G26
0
11.0
11.2
11.4 11.6 11.8 12.0 SSB NOISE FIGURE (dB)
12.2
5557 G27
450MHz Conversion Gain, IIP3 and NF vs LO Power
25 23 21 19 IIP3 -40C 25C 85C
-40 -35
LO Leakage vs LO Frequency 450MHz and 900MHz Applications
TA = 25C PLO = 0dBm LO-RF LO-IF
-45 900MHz APPLICATION
HIGH-SIDE LO IF = 70MHz
-50
-55 450MHz APPLICATION
500
-6
-4
2 0 -2 LO INPUT POWER (dBm)
4
6
5557 G14
-60 400
800 600 1000 LO FREQUENCY (MHz)
1200
5557 G15
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LT5557
VCC = 3.3V, Test circuit shown in Figure 1. 900MHz application (with external RF/LO matching), 140MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), low-side LO at 0dBm, unless otherwise noted. 900MHz Conversion Gain, IIP3 and IFOUT, 2 x 2 and 3 x 3 Spurs Conversion Gain, IIP3 and NF vs vs RF Input Power (Single-Tone) NF vs LO Power RF Frequency
28 26 IIP3 24 22 LOW-SIDE LO 20 TA = 25C 18 IF = 140MHz 16 14 12 SSB NF 10 8 6 GC 4 2 800 900 750 950 1000 1050 850 RF FREQUENCY (MHz)
5557 G16
TYPICAL PERFOR A CE CHARACTERISTICS
27 25 23 21 19 17 15 13 11 9 7 5 3 1
GC (dB), NF (dB), IIP3 (dBm)
GC (dB), NF (dB), IIP3 (dBm)
OUTPUT POWER (dBm)
2.3-2.7GHz application (with external RF matching) 360MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), PLO = -3dBm, unless otherwise noted. LO Leakage and RF Isolation vs Conversion Gain, IIP3 and SSB 2.6GHz Conversion Gain, IIP3 and LO and RF Frequency NF vs RF Frequency NF vs LO Power
26 24 IIP3 22 LOW-SIDE LO 20 HIGH-SIDE LO 18 16 14 12 SSB NF 10 8 TA = 25C 6 GC 4 2 0 2.4 2.6 2.3 2.7 2.5 RF FREQUENCY (GHz)
5557 G19
GC (dB), NF (dB), IIP3 (dBm)
GC (dB), NF (dB), IIP3 (dBm)
LO LEAKAGE (dBm)
3.3-3.8GHz application (with external RF matching) 450MHz IF output, PRF = -6dBm (-6dBm/tone for 2-tone IIP3 tests, f = 1MHz), low-side LO at -3dBm, unless otherwise noted. LO Leakage and RF Isolation vs LO Conversion Gain, IIP3 and SSB NF 3.6GHz Conversion Gain, IIP3 and and RF Frequency vs RF Frequency SSB NF vs LO Power
24 22 20
GC (dB), NF (dB), IIP3 (dBm)
IIP3
GC (dB), NF (dB), IIP3 (dBm)
LO LEAKAGE (dBm)
18 16 SSB NF 14 12 10 8 6 4 2 0 3.3 3.4 3.7 3.6 3.5 RF FREQUENCY (GHz) 3.8
5557 G22
TA = 25C GC
6
UW
15 5
IIP3 -40C 25C 85C SSB NF LOW-SIDE LO IF = 140MHz
-5 -15 -25 -35 -45 -55 -65 -75 2RF-2LO (RF = 830MHz) IFOUT (RF = 900MHz)
TA = 25C LO = 760MHz IF = 140MHz
GC
LO INPUT POWER (dBm)
5557 G17
3RF-3LO (RF = 806.67MHz) -95 3 6 -15 -12 -9 -6 -3 0 RF INPUT POWER (dBm) -85
9
12
5557 G18
26 24 22 20 18 16 14 12 10 8 6 4 2 0
-20
RF-LO RF-IF
45
IIP3
-30
-40C 25C 85C
35
RF ISOLATION (dB)
SSB NF
-40 LO-RF
25
LOW-SIDE LO GC
-50 LO-IF
15
-60
-9 -7 -3 -1 1 -5 LO INPUT POWER (dBm) 3
5557 G20
5 1.9 2.1 2.3 2.5 2.7 2.9 LO/RF FREQUENCY (GHz) 3.1
5557 G21
24 22 20 18 16 14 12 10 8 6 4 2 0 -9 -7 -1 -3 -5 LO INPUT POWER (dBm) 1 3
5557 G23
-30
55 RF-LO
IIP3
-40
45
SSB NF
RF ISOLATION (dB)
RF-IF -50 35
-40C 25C 85C GC
-60
LO-IF LO-RF
25
-70 2.8
3.0 3.4 3.6 3.2 LO/RF FREQUENCY (GHz)
3.8
5557 G24
15
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LT5557
PI FU CTIO S
NC (Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally. These pins should be grounded on the circuit board for the best LO-to-RF and LO-to-IF isolation. RF (Pin 3): Single-Ended Input for the RF Signal. This pin is internally connected to the primary side of the RF input transformer, which has low DC resistance to ground. If the RF source is not DC blocked, then a series blocking capacitor must be used. The RF input is internally matched from 1.6GHz to 2.3GHz. Operation down to 400MHz or up to 3.8GHz is possible with simple external matching. EN (Pin 5): Enable Pin. When the input enable voltage is higher than 2.7V, the mixer circuits supplied through Pins 6, 7, 10 and 11 are enabled. When the input voltage is less than 0.3V, all circuits are disabled. Typical input current is 53A for EN = 3.3V and 0A when EN = 0V. The EN pin should not be left floating. Under no conditions should the EN pin voltage exceed VCC + 0.3V, even at start-up. VCC2 (Pin 6): Power Supply Pin for the Bias Circuits. Typical current consumption is 3.3mA. This pin should be externally connected to the VCC1 pin and decoupled with 1000pF and 1F capacitors. VCC1 (Pin 7): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is 25.1mA. This pin should be externally connected to the VCC2 pin and decoupled with 1000pF and 1F capacitors. GND (Pins 9, 12): Ground. These pins are internally connected to the backside ground for improved isolation. They should be connected to the RF ground on the circuit board, although they are not intended to replace the primary grounding through the backside contact of the package. IF-, IF + (Pins 10, 11): Differential Outputs for the IF Signal. An impedance transformation may be required to match the outputs. These pins must be connected to VCC through impedance matching inductors, RF chokes or a transformer center tap. Typical current consumption is 26.6mA each (53.2mA total). LO (Pin 15): Single-Ended Input for the Local Oscillator Signal. This pin is internally connected to the primary side of the LO transformer, which is internally DC blocked. An external blocking capacitor is not required. The LO input is internally matched from 1GHz to 5GHz. Operation down to 380MHz is possible with simple external matching. Exposed Pad (Pin 17): Circuit Ground Return for the Entire IC. This must be soldered to the printed circuit board ground plane.
BLOCK DIAGRA
W
U
U
U
15 LO
REGULATOR VREF LIMITING AMPLIFIERS VCC1
EXPOSED 17 PAD GND 12 IF+ 11
3
RF DOUBLE-BALANCED MIXER BIAS EN 5 6 VCC2 7 VCC1
IF-
10
GND 9
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LT5557
TEST CIRCUITS
LOIN L4 0.015" C4 EXTERNAL MATCHING FOR LO BELOW 1GHz 16 1 2 RFIN ZO 50 L (mm) C5 LOW-PASS MATCH FOR 450MHz, 900MHz AND 3.6GHz RF RFIN NC NC NC LT5557 3 4 RF NC EN C5 3.9pF L5 3.6nH *HIGH-PASS MATCH FOR 2.6GHz RF APPLICATION RF LO IF RF MATCH L 6.5mm 1.7mm C5 12pF 3.9pF LO MATCH L4 10nH 2.7nH - - C4 8.2pF 3.9pF - - IF MATCH L1 270nH 180nH 47nH 39nH C3 15pF 3.9pF 1.2pF - EN 5 6 7 IF - GND VCC2 VCC1 NC 8 VCC (2.9V to 3.9V) C1 C2
5557 F01
R = 3.7
RF GND BIAS
0.062" 15 LO 14 NC 13 NC GND IF 12 3 C3 10 9 L1 2 1 0.015" T1 4 GND
DC1131A BOARD STACK-UP (NELCO N4000-13)
+ 11
*
*
6
IFOUT 240MHz
450MHz High Side 70MHz 900MHz Low Side 140MHz 2.6GHz 3.6GHz 360MHz 450MHz
HIGH-PASS* 2.9mm 1pF
REF DES C1 C2 C3
VALUE 1000pF 1F 2.2pF
SIZE 0402 0603 0402
PART NUMBER AVX 04025C102JAT AVX 0603ZD105KAT AVX 04025A2R2BAT
REF DES L4, C4, C5 L1 T1
VALUE 82nH 8:1
SIZE 0402 0603
PART NUMBER See Applications Information Toko LLQ1608-F82NG Mini-Circuits TC8-1+
Figure 1. Standard Downmixer Test Schematic--Transformer-Based Bandpass IF Matching (240MHz IF)
LOIN
L4 C4 16 15 LO 14 NC 13 NC GND IF LT5557 3 4 RF NC EN EN 5 6 7 IF - GND VCC2 VCC1 NC 8 VCC (2.9V to 3.9V) C1 C2
5557 F02
0.018" DISCRETE IF BALUN 12 0.062"
R = 4.4
RF GND BIAS
0.018"
GND
DC910A BOARD STACK-UP (FR-4)
EXTERNAL MATCHING FOR LO BELOW 1GHz
1 2
NC NC NC
C6 L1 L3 C7 C3 IFOUT 240MHz
+ 11
RFIN
ZO 50 L (mm) C5
10 9 L2
LOW-PASS MATCH FOR 450MHz, 900MHz AND 3.6GHz RF
REF DES C1, C3 C2 C6, C7
VALUE 1000pF 1F 4.7pF
SIZE 0402 0603 0402
PART NUMBER AVX 04025C102JAT AVX 0603ZD105KAT AVX 04025A4R7CAT
REF DES L4, C4, C5 L1, L2 L3
VALUE 100nH 150nH
SIZE 0402 0603 0603
PART NUMBER See Applications Information Toko LL1608-FSLR10J Toko LL1608-FSLR15J
Figure 2. Downmixer Test Schematic--Discrete IF Balun Matching (240MHz IF)
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LT5557
APPLICATIO S I FOR ATIO
Introduction
The LT5557 consists of a high linearity double-balanced mixer, RF buffer amplifier, high speed limiting LO buffer amplifier and bias/enable circuits. The RF and LO inputs are both single ended. The IF output is differential. Low side or high side LO injection can be used. Two evaluation circuits are available. The standard evaluation circuit, shown in Figure 1, incorporates transformerbased IF matching and is intended for applications that require the highest dynamic range and the widest IF bandwidth. The second evaluation circuit, shown in Figure 2, replaces the IF transformer with a discrete IF balun for reduced solution cost and size. The discrete IF balun delivers higher conversion gain, but slightly degraded IIP3 and noise figure, and reduced IF bandwidth. RF Input Port The mixer's RF input, shown in Figure 3, consists of an integrated transformer and a high linearity differential amplifier. The primary terminals of the transformer are connected to the RF input (Pin 3) and ground. The secondary side of the transformer is internally connected to the amplifier's differential inputs. The DC resistance of the primary is 4.2. If the RF source has DC voltage present, then a coupling capacitor must be used in series with the RF input pin. The RF input is internally matched from 1.6GHz to 2.3GHz, requiring no external components over this frequency range. The input return loss, shown in Figure 4a, is typically 12dB at the band edges. The input match at the lower
LOW-PASS MATCH FOR 450MHz, 900MHz and 3.6GHz RF RFIN ZO = 50 L = L (mm) 3 C5
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RF PORT RETURN LOSS (dB)
RF PORT RETURN LOSS (dB)
RF
RFIN L5
C5
HIGH-PASS MATCH FOR 2.6GHz RF AND WIDEBAND RF
Figure 3. RF Input Schematic
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band edge can be optimized with a series 3.9pF capacitor at Pin 3, which improves the 1.6GHz return loss to greater than 25dB. Likewise, the 2.3GHz match can be improved to greater than 25dB with a series 1.5nH inductor. A series 2.7nH/2.2pF network will simultaneously optimize the lower and upper band edges and expand the RF input bandwidth to 1.2GHz-2.5GHz. Measured RF input return losses for these three cases are also plotted in Figure 4a. Alternatively, the input match can be shifted as low as 400MHz or up to 3800MHz by adding a shunt capacitor (C5) to the RF input. A 450MHz input match is realized with C5 = 12pF, located 6.5mm away from Pin 3 on the evaluation board's 50 input transmission line. A 900MHz input match requires C5 = 3.9pF, located at 1.7mm. A 3.6GHz input match is realized with C5 = 1pF, located at 2.9mm. This
0 NO EXT MATCH -5 -10 -15 -20 -25 SERIES 2.7nH AND 2.2pF SERIES 3.9pF 0.7 1.2 SERIES 1.5nH 3.7 4.2 -30 0.2 1.7 2.2 2.7 3.2 FREQUENCY (GHz)
5557 F04a
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(4a) Series Reactance Matching
0 -5 -10 -15 -20 -25 -30 0.2 450MHz L = 6.5mm C5 = 12pF 900MHz L = 1.7mm C5 = 3.9pF 0.7 1.2 NO EXT MATCH
TO MIXER
3.6GHz L = 2.9mm C5 = 1pF
1.7 2.2 2.7 3.2 FREQUENCY (GHz)
3.7
2.6GHz SERIES 3.9pF SHUNT 3.6nH 4.2
5557 F04b
(4b) Series Shunt Matching Figure 4. RF Input Return Loss With and Without External Matching
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LT5557
APPLICATIO S I FOR ATIO
series transmission line/shunt capacitor matching topology allows the LT5557 to be used for multiple frequency standards without circuit board layout modifications. The series transmission line can also be replaced with a series chip inductor for a more compact layout. Input return losses for the 450MHz, 900MHz, 2.6GHz and 3.6GHz applications are plotted in Figure 4b. The input return loss with no external matching is repeated in Figure 4b for comparison. The 2.6GHz RF input match uses the high-pass matching network shown in Figures 1 and 3 with C5 = 3.9pF and L5 = 3.6nH. The high-pass input matching network is also used to create a wideband or dual-band input match. For example, with C5 = 3.3pF and L5 = 10nH, the RF input is matched from 800MHz to 2.2GHz, with optimum matching in the 800MHz to 1.1GHz and 1.6GHz to 2.2GHz bands, simultaneously. RF input impedance and S11 versus frequency (with no external matching) are listed in Table 1 and referenced to Pin 3. The S11 data can be used with a microwave circuit simulator to design custom matching networks and simulate board-level interfacing to the RF input filter.
Table 1. RF Input Impedance vs Frequency
FREQUENCY (MHz) 50 300 450 600 900 1300 1700 1950 2200 2450 2700 3000 3300 3600 3900 INPUT IMPEDANCE 4.6 + j2.3 9.1 + j11.2 12.0 + j14.5 14.7 + j17.4 20.5 + j23.3 34.4 + j30.3 59.6 + j23.8 69.2 + j2.8 59.2 - j18.1 41.5 - j24.5 28.3 - j21.3 19.0 - j13.5 13.9 - j5.1 10.8 + j3.4 9.4 + j12.3 S11 MAG 0.832 0.706 0.639 0.588 0.506 0.380 0.229 0.163 0.184 0.274 0.374 0.481 0.568 0.645 0.700 ANGLE 174.7 153.8 145.8 138.7 123.4 97.5 55.8 6.9 -53.5 -94.2 -120.3 -145.5 -167.3 171.9 151.4
LO PORT RETURN LOSS (dB)
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LO Input Port The mixer's LO input, shown in Figure 5, consists of an integrated transformer and high speed limiting differential amplifiers. The amplifiers are designed to precisely drive the mixer for the highest linearity and the lowest noise figure. An internal DC blocking capacitor in series with the transformer's primary eliminates the need for an external blocking capacitor. The LO input is internally matched from 1 to 5GHz. The input match can be shifted down, as low as 750MHz, with a single shunt capacitor (C4) on Pin 15. One example is plotted in Figure 6 where C4 = 2.7pF produces a 750MHz to 1GHz match. LO input matching below 750MHz requires the series inductor (L4)/shunt capacitor (C4) network shown in Figure 5. Two examples are plotted in Figure 6 where L4 = 2.7nH/C4 = 3.9pF produces a 650MHz to 830MHz match and L4 = 10nH/C4 = 8.2pF produces a 460MHz to 560MHz match. The evaluation boards do not include pads for L4, so the circuit trace needs to be cut near Pin 15 to insert L4. A low cost multilayer chip inductor is adequate for L4.
EXTERNAL MATCHING FOR LO < 1GHz LOIN L4 15 C4 REGULATOR VCC2
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TO MIXER LO LIMITER VREF
Figure 5. LO Input Schematic
0
-10 NO EXT MATCH L4 = 10nH C4 = 8.2pF
-20
L4 = 2.7nH C4 = 3.9pF -30 0.3
L4 = 0 C4 = 2.7pF 1 5
5557 G06
LO FREQUENCY (GHz)
Figure 6. LO Input Return Loss
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LT5557
APPLICATIO S I FOR ATIO
The optimum LO drive is -3dBm for LO frequencies above 1.2GHz, although the amplifiers are designed to accommodate several dB of LO input power variation without significant mixer performance variation. Below 1.2GHz, 0dBm LO drive is recommended for optimum noise figure, although -3dBm will still deliver good conversion gain and linearity. Custom matching networks can be designed using the port impedance data listed in Table 2. This data is referenced to the LO pin with no external matching.
Table 2. LO Input Impedance vs Frequency
FREQUENCY (MHz) 50 300 500 700 900 1200 1500 1800 2200 2600 3000 3500 4000 4500 5000 INPUT IMPEDANCE 10.0 - j326 8.5 - j41.9 11.8 - j10.1 18.8 + j10.9 35.0 + j27.4 72.9 + j19.3 70.0 - j12.6 55.0 - j17.0 47.8 - j9.7 53.6 - j1.9 66.7 + j0.7 82.1 - j13.9 69.0 - j30.1 43.7 - j13.2 36.4 + j19.8 S11 MAG 0.991 0.820 0.632 0.474 0.350 0.241 0.196 0.167 0.102 0.039 0.143 0.263 0.290 0.154 0.271 ANGLE -17.4 -99.2 -155.9 151.8 100.8 31.3 -26.1 -64.3 -97.2 -26.8 2.1 -17.4 -43.5 -107.5 111.6
IF Output Port The IF outputs, IF+ and IF-, are internally connected to the collectors of the mixer switching transistors (see Figure 7). Both pins must be biased at the supply voltage, which can be applied through the center tap of a transformer or through matching inductors. Each IF pin draws 26.6mA of supply current (53.2mA total). For optimum single-ended performance, these differential outputs should be combined externally through an IF transformer or a discrete IF balun circuit. The standard evaluation board (see Figure 1) includes an IF transformer for impedance transformation and differential to single-ended transformation. A second evaluation board (see Figure 2) realizes the same functionality with a discrete IF balun circuit.
VCC
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The IF output impedance can be modeled as 560 in parallel with 2.6pF at low frequencies. An equivalent small-signal model (including bondwire inductance) is shown in Figure 8. Frequency-dependent differential IF output impedance is listed in Table 3. This data is referenced to the package pins (with no external components) and includes the effects of IC and package parasitics. The IF output can be matched for IF frequencies as low as several kHz or as high as 600MHz.
Table 3. IF Output Impedance vs Frequency
FREQUENCY (MHz) 1 70 140 190 240 300 360 450 600 DIFFERENTIAL OUTPUT IMPEDANCE (RIF || XIF) 560 || - j63.7k (2.6pF) 556 || - j870 (2.6pF) 551 || - j440 (2.6pF) 523 || - j320 (2.6pF) 529 || - j254 (2.6pF) 509 || - j200 (2.66pF) 483 || - j163 (2.7pF) 448 || - j125 (2.83pF) 396 || - j92 (2.88pF)
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Two methods of differential to single-ended IF matching are described: * Transformer - Based Bandpass * Discrete IF balun
IF+ 11 C3 IF
-
8:1
IFOUT 50
L1 VCC
10
Figure 7. IF Output with External Matching
0.7nH IF+
11 RIF || XIF
RS
CS IF 0.7nH
5557 F08
-
10
Figure 8. IF Output Small-Signal Model
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LT5557
APPLICATIO S I FOR ATIO
Transformer-Based Bandpass IF Matching
IF PORT RETURN LOSS (dB0
The standard evaluation board (shown in Figure 1) uses an L-C bandpass IF matching network, with an 8:1 transformer connected across the IF pins. The L-C network maximizes mixer performance at the desired IF frequency. The transformer performs impedance transformation and provides a single-ended 50 output. The value of L1 is calculated as: L1 = 1/[(2fIF)2 * CIF] where CIF is the sum of C3 and the internal IF capacitance (listed in Table 3). The value of C3 is selected such that L1 falls on a standard value, while satisfying the desired IF bandwidth. The IF bandwidth can be estimated as: BWIF = 1/(2REFFCIF) where REFF, the effective IF resistance when loaded with the transformer and inductor loss, is approximately 200. Below 40MHz, the magnitude of the internal IF reactance is relatively high compared to the internal resistance. In this case, L1 (and C3) can be eliminated, and the 8:1 transformer alone is adequate for IF matching. The LT5557 was characterized with IF frequencies of 70MHz, 140MHz, 240MHz, 360MHz and 450MHz. The values of L1 and C3 used for these frequencies are tabulated in Figure 1 and repeated in Figure 9. In all cases, L1 is a high-Q 0603 wire-wound chip inductor, for highest conversion gain. Low-cost multi-layer chip inductors can be substituted, with a slight reduction in conversion gain. The measured IF output return losses are plotted in Figure 9.
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0 -10 -20 B A C -30 50 150 D E 550
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250 350 450 IF FREQUENCY (MHz)
A: B: C: D: E:
70MHz, L1 = 270nH, C3 = 15pF 140MHz, L1 = 180nH, C3 = 3.9pF 240MHz, L1 = 82nH, C3 = 2.2pF 360MHz, L1 = 47nH, C3 = 1.2pF 450MHz, L1 = 39nH, C3 = 0pF
Figure 9. IF Output Return Loss with Transformer-Based Bandpass Matching
Discrete IF Balun Matching For many applications, it is possible to replace the IF transformer with the discrete IF balun shown in Figure 2. The values of L1, L2, C6 and C7 are calculated to realize a 180 degree phase shift at the desired IF frequency and provide a 50 single-ended output, using the equations listed below. Inductor L3 is calculated to cancel the internal 2.6pF capacitance. L3 also supplies bias voltage to the IF+ pin. Low cost multilayer chip inductors are adequate for L1, L2 and L3. C3 is a DC blocking capacitor.
L1, L2 = C6,C7 = L3 = XIF IF
RIF * ROUT IF 1 IF * RIF * ROUT
5557f
LT5557
APPLICATIO S I FOR ATIO
These equations give a good starting point, but it is usually necessary to adjust the component values after building and testing the circuit. The final solution can be achieved with less iteration by considering the parasitics of L3 in the above calculations. Specifically, the effective parallel resistance of L3 (calculated from the manufacturer's Q data) will reduce the value of RIF, which in turn influences the calculated values of L1 (=L2) and C6 (=C7). Also, the effective parallel capacitance of L3 (taken from the manufacturers SRF data) must be considered, since it is in parallel with XIF (from table 3). Frequently, the calculated value for L1 does not fall on a standard value for the desired IF. In this case, a simple solution is to load the IF output with a high-value external chip resistor in parallel with L3, which reduces the value of RIF, until L1 is a standard value. Discrete IF balun element values for four common IF frequencies (190MHz, 240MHz, 360MHz and 450MHz) are listed in Table 4. The 190MHz application circuit uses a 3.3k resistor in parallel with L3 as described above. The corresponding measured IF output return losses are shown in Figure 10. Typical conversion gain, IIP3 and LOIF leakage, versus RF input frequency, for all four examples is shown in Figure 11. Typical conversion gain, IIP3 and noise figure versus IF output frequency is shown in Figure 12. Compared to the transformer-based IF matching technique, this network delivers approximately 1dB higher conversion gain (since the IF transformer loss is eliminated), though noise figure and IIP3 are degraded slightly. The most significant performance difference, as shown in Figure 12, is the limited IF bandwidth available from the discrete approach. For low IF frequencies, the absolute bandwidth is small, whereas higher IF frequencies offer wider bandwidth.
Table 5. Discrete IF Balun Element Values (ROUT = 50) IF FREQUENCY (MHz) 190 240 360 450 L1, L2 120nH 100nH 56nH 47nH C6, C7 6.0pF 4.7pF 3.0pF 2.2pF L3 270nH || 3.3k 150nH 82nH 47nH
IF PORT RETURN LOSS (dB)
GC (dB), IIP3 (dBm)
GC (dB), NF (dB), IIP3 (dBm)
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0 -10 -20 240 MHz -30 50 190 MHz 150 450 MHz 550
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360 MHz
250 350 450 IF FREQUENCY (MHz)
Figure 10. IF Output Return Losses with Discrete Balun Matching
26 24 22
20 18 16 14 12 10 -50
LO-IF GC IIP3 190IF 240IF 360IF 450IF
-10 -20
LO-IF LEAKAGE (dBm)
LOW-SIDE LO (-3dBm) -30 TA = 25C
-40
8
6 4 2 1700
-60 -70 2200
5557 F11
2100 2000 1900 1800 RF INPUT FREQUENCY (MHz)
Figure 11. Conversion Gain, IIP3 and LO-IF Leakage vs RF Input Frequency and IF Output Frequency (in MHz) Using Discrete IF Balun Matching
26 24 22
20 18 16 14 12
IIP3 190IF 240IF 360IF 450IF
10
8 6 4
SSB NF
RF = 1950MHz LOW-SIDE LO (-3dBm) TA = 25C
GC
2 150
200 250 300 350 400 450 500 IF OUTPUT FREQUENCY (MHz) 5557 F12
Figure 12. Conversion Gain, IIP3 and SSB NF vs IF Output Frequency Using Discrete IF Balun Matching
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LT5557
APPLICATIO S I FOR ATIO
Differential IF Output Matching
For fully differential IF architectures, the mixer's IF outputs can be matched directly into a SAW filter or IF amplifier, thus eliminating the IF transformer. One example is shown in Figure 13, where the mixer's 500 differential output resistance is matched into a 100 differential SAW filter using the tapped-capacitor technique. Inductors L1 and L2 form the inductive portion of the matching network, cancel the internal 2.6pF capacitance, and supply DC bias current to the mixer core. Capacitors C6 through C9 are the capacitive portion of the matching, and perform the impedance step-down. The calculations for tapped-capacitor matching are covered in the literature, and are not repeated here. Other differential matching options include low-pass, highpass and band-pass. The choice depends on the system
C6 C8 IF + L1 SAW FILTER
IF AMP
5
IF -
L2
5557 F13
C7 C9
SUPPLY DECOUPLING
C1
VCC C2
Figure 13. Differential IF Matching Using the Tapped-Capacitor Technique Standard Evaluation Board Layout (DC1131A)
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performance goals, IF frequency, IF bandwidth and filter (or amplifier) input impedance. Contact the factory for applications assistance. Enable Interface Figure 14 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5557 is 2.7V. To disable the chip, the enable voltage must be less than 0.3V. If the EN pin is allowed to float, the chip will tend to remain in its last operating state. Thus it is not recommended that the enable function be used in this manner. If the shutdown function is not required, then the EN pin should be connected directly to VCC. The voltage at the EN pin should never exceed the power supply voltage (VCC) by more than 0.3V. If this should occur, the supply current could be sourced through the EN pin ESD diode, potentially damaging the IC.
VCC2 EN 22k LT5557
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Figure 14. Enable Input Circuit Discrete IF Evaluation Board Layout (DC910A)
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LT5557
PACKAGE DESCRIPTIO
4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) 2.15 0.10 (4-SIDES) 0.75 0.05 R = 0.115 TYP PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER
NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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UF Package 16-Lead Plastic QFN (4mm x 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05 PACKAGE OUTLINE 0.30 0.05 0.65 BSC 15 16 0.55 0.20 1 2
(UF16) QFN 10-04
0.200 REF 0.00 - 0.05
0.30 0.05 0.65 BSC
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LT5557
RELATED PARTS
PART NUMBER DESCRIPTION Infrastructure LT5511 LT5512 LT5514 LT5515 LT5516 LT5517 LT5519 LT5520 LT5521 LT5522 LT5525 LT5526 LT5527 LT5528 LT5568 High Linearity Upconverting Mixer 1KHz-3GHz High Signal Level Active Mixer Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 40MHz to 900MHz Quadrature Demodulator RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer 20dBm IIP3 from 30MHz to 900MHz, Integrated LO Buffer, HF/VHF/UHF Optimized 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator COMMENTS
0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 10MHz to 3700MHz High Linearity Upconverting Mixer 400MHz to 2.7GHz High Signal Level Downconverting Mixer High Linearity, Low Power Downconverting Mixer High Linearity, Low Power Downconverting Mixer 400MHz to 3.7GHz, 5V High Signal Level Downconverting Mixer 1.5GHz to 2.4GHz High Linearity Direct I/Q Modulator 600MHz to 1.2GHz High Linearity Direct I/Q Modulator RF Peak Detectors with >40dB Dynamic Range 100kHz to 1000MHz RF Peak Power Detector 300MHz to 7GHz RF Peak Power Detector 300MHz to 3GHz RF Peak Power Detector 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports Single-Ended 50 RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28mA 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, -65dBm LO-RF Leakage 23.5dBm IIP3 at 1.9GHz, NF = 12.5dB, Single-Ended RF and LO Ports 21.8dBm OIP3 at 2GHz, -159dBm/Hz Noise Floor, 50 Interface at all Ports 22.9dBm OIP3, -160.3dBm/Hz Noise Floor, -46dBc Image Rejection, -43dBm Carrier Leakage 300MHz to 3GHz, Temperature Compensated, -32dBm to 12dBm 100kHz to 1GHz, Temperature Compensated, -34dBm to 14dBm 44dB Dynamic Range, Temperature Compensated, SC70 Package, -32dBm to 12dBm 36dB Dynamic Range, Low Power Consumption, SC70 Package, -30dBm to 6dBm
RF Power Detectors LTC(R)5505 LTC5507 LTC5508 LTC5509 LTC5530 LTC5531 LTC5532 LTC5533 LT5534 LTC5536 LT5537 LT5546
300MHz to 7GHz Precision RF Peak Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain, -32dBm to 10dBm 300MHz to 7GHz Precision RF Peak Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset, -32dBm to 10dBm 300MHz to 7GHz Precision RF Peak Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset, 35mV Offset Voltage Tolerence 300MHz to 11GHz Dual Precision RF Peak Detector 50MHz to 3GHz RF Log Detector with 60dB Dynamic Range Precision 600MHz to 7GHz RF Peak Detector with Fast Comparator Output 90dB Dynamic Range RF Log Detector 500MHz Quadrature Demodulator with VGA and 17MHz Baseband Bandwidth -32dBm to 12dBm, Adjustable Offset, 45dB Ch-Ch Isolation 1dB Output Variation over Temperature, 38ns Response Time 25ns Response Time, Comparator Reference Input, Latch Enable Input, -26dBm to +12dBm Input Range LF to 1GHz, -79dBm to 12dBm, Very Low Tempco 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, -7dB to 56dB Linear Power Gain
5557f LT 1206 * PRINTED IN THE USA
Low Voltage RF Building Block
16
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2006

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